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1. general description the sa616 is a low-voltage high performance monolithic fm if system incorporating a mixer/oscillator, two limiting intermediate fr equency amplifiers, q uadrature detector, logarithmic received signal strength indicator (rssi), voltage regulator and audio and rssi op amps. the sa616 is available in ssop20 and hvqfn20 packages. the sa616 was designed for portable communi cation applications and will function down to 2.7 v. the rf section is similar to the famous sa615. the audio and rssi outputs have amplifiers with access to the feedback pa th. this enables the designer to adjust the output levels or add filtering. 2. features and benefits ? low power consumption: 3.5 ma typical at 3 v ? mixer input to >150 mhz ? mixer conversion power gain of 17 db at 45 mhz ? xtal oscillator effective to 150 mhz (lc oscilla tor or external oscilla tor can be used at higher frequencies) ? 102 db of if amp/limiter gain ? 2 mhz if amp/limiter small signal bandwidth ? temperature compensated logarithmi c rssi with a 80 db dynamic range ? low external component count; suitab le for crystal/ceramic/lc filters ? excellent sensitivity: 0.31 ? v into 50 ? matching network for 12 db sinad (signal-to-noise-and-distortion ratio) for 1 khz tone with rf at 45 mhz and if at 455 khz ? sa616 meets cellular radio specifications ? audio output internal op amp ? rssi output internal op amp ? internal op amps wit h rail-to-rail outputs ? esd protection: human body model 2 kv; robot model 200 v 3. applications ? portable cellular radio fm if ? cordless phones ? wireless systems ? rf level meter ? spectrum analyzer ? instrumentation sa616 low-voltage high performance mixer fm if system rev. 3 ? 21 june 2010 product data sheet
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 2 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system ? fsk and ask data receivers ? log amps ? portable high performance communication receiver ? single conversion vhf receivers 4. ordering information 5. block diagram table 1. ordering information t amb = ? 40 ? c to +85 ? c type number topside mark package name description version sa616dk/01 sa616dk ssop20 plastic shrink small outline package; 20 leads; body width 4.4 mm sot266-1 sa616bs 616b hvqfn20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 ? 4 ? 0.85 mm sot917-1 pin numbers for ssop20; hvqfn20 pins shown in parentheses. fig 1. block diagram of sa616 002aaf352 mixer if amp limiter osc rssi quad audio vreg eb 20 (18) 19 (17) 18 (16) 17 (15) 16 (14) 15 (13) 14 (12) 13 (11) 12 (10) 11 (9) 1 (19) 2 (20) 3 (1) 4 (2) 5 (3) 6 (4) 7 (5) 8 (6) 9 (7) 10 (8)
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 3 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 6. pinning information 6.1 pinning fig 2. pin configuration for ssop20 (1) die attach paddle (dap). fig 3. pin configuration for hvqfn20 sa616dk/01 rf_in mixer_out rf_in_decoupl if_amp_decoupl osc_out if_amp_in osc_in if_amp_decoupl rssi_out if_amp_out v cc gnd audio_feedback limiter_in audio_out limiter_decoupl rssi_feedback limiter_decoupl quadrature_in limiter_out 002aaf350 1 2 3 4 5 6 7 8 9 10 12 11 14 13 16 15 18 17 20 19 002aaf351 sa616bs transparent top view limiter_decoupl v cc audio_feedback limiter_in rssi_out gnd osc_in if_amp_out osc_out if_amp_decoupl audio_out rssi_feedback quadrature_in limiter_out limiter_decoupl rf_in_decoupl rf_in mixer_out if_amp_decoupl if_amp_in 511 412 313 214 115 6 7 8 9 10 20 19 18 17 16 terminal 1 index area dap (1)
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 4 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 6.2 pin description [1] hvqfn20 package supply ground is connected to both g nd pin and exposed center pad. gnd pin must be connected to supply ground for pr oper device operation. for enhanced thermal, electrical, and board level performance, the exposed pad needs to be soldered to the board using a corresponding thermal pad on the board and for proper heat conduction through the board, thermal vias need to be incorporated in the pcb in the thermal pad region. table 2. pin description symbol pin description ssop20 hvqfn20 rf_in 1 19 rf input rf_in_decoupl 2 20 rf input decoupling pin osc_out 3 1 oscillator output osc_in 4 2 oscillator input rssi_out 5 3 rssi output v cc 6 4 positive supply voltage audio_feedback 7 5 audio amplifier negative feedback terminal audio_out 8 6 audio amplifier output rssi_feedback 9 7 rssi amplifier negative feedback terminal quadrature_in 10 8 quadrature detector input terminal limiter_out 11 9 limiter amplifier output limiter_decoupl 12 10 limiter amplifier decoupling pin limiter_decoupl 13 11 limiter amplifier decoupling pin limiter_in 14 12 limiter amplifier input gnd 15 13 [1] ground; negative supply if_amp_out 16 14 if amplifier output if_amp_decoupl 17 15 if amplifier decoupling pin if_amp_in 18 16 if amplifier input if_amp_decoupl 19 17 if amplifier decoupling pin mixer_out 20 18 mixer output - - dap exposed die attach paddle
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 5 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 7. functional description the sa616 is an if signal processing system suitable for second if systems with input frequency as high as 150 mhz. the bandwidth of the if amplifier and limiter is at least 2 mhz with 90 db of gain. the gain/bandwidth distribution is optimized for 455 khz, 1.5 k ? source applications. the overall system is well-suited to battery operation as well as high performance and high quality products of all types. the input stage is a gilbert cell mixer with osc illator. typical mixer ch aracteristics include a noise figure of 6.2 db, conversion gain of 17 db, and input third-order intercept of ? 9 dbm. the oscillator will operate in excess of 200 mhz in l/c tank configurations. hartley or colpitts circuits can be used up to 100 mhz for crystal configurations. butler oscillators are recommen ded for crystal configurations up to 150 mhz. the output impedance of the mixer is a 1.5 k ? resistor permitting direct connection to a 455 khz ceramic filter. the input resistance of the limiting if amplifiers is also 1.5 k ? . with most 455 khz ceramic filters and many crystal filters, no impedance matching network is necessary. the if amplifier has 43 db of gai n and 5.5 mhz bandwidth. the if limiter has 60 db of gain and 4.5 mhz bandwidth. to achieve optimum linearity of the log signal strength indicator, there must be a 12 db(v) insertion loss between the first and second if stages. if the if filter or interstage network does not cause 12 db(v) insertion loss, a fixe d or variable resistor or an l pad for simultaneous loss and impedance matching c an be added between the first if output (if_amp_out) and the inters tage network. the overall gain will then be 90 db with 2 mhz bandwidth. the signal from the second limiting amplifier goes to a gilbert cell quadrature detector. one port of the gilbert cell is internally driv en by the if. the other output of the if is ac-coupled to a tuned quadrature netw ork. this signal, which now has a 90 ? phase relationship to the internal signal, drives the ot her port of th e multiplier cell. the demodulated output of the quadrature driv es an internal op amp. this op amp can be configured as a unity gain buffer, or for simultaneous gain, filtering, and second-order temperature compensation if needed. it can drive an ac load as low as 5 k ? with a rail-to-rail output. a log signal strength completes the circuitry. the output range is greater than 90 db and is temperature compensated. this log signal st rength indicator exceeds the criteria for amps or tacs cellular telephone. this signal drives an internal op amp. the op amp is capable of rail-to-rail output. it can be used for gain, filtering, or second-order temperature compensation of the rssi, if needed. remark: db(v) = 20log v o /v i .
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 6 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 8. limiting values 9. thermal characteristics 10. static characteristics table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage - 7 v t stg storage temperature ? 65 +150 ? c t amb ambient temperature operating ? 40 +85 ? c table 4. thermal characteristics symbol parameter conditions max unit z th(j-a) transient thermal impedance from junction to ambient sa616dk/01 (ssop20) 117 k/w sa616bs (hvqfn20) 40 k/w table 5. static characteristics v cc =3v; t amb =25 ? c; unless specified otherwise. symbol parameter conditions min typ max unit v cc supply voltage 2.7 - 7.0 v i cc supply current - 3.5 5.0 ma
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 7 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 11. dynamic characteristics table 6. dynamic characteristics t amb =25 ? c; v cc = 3 v; unless specified otherwise. rf frequency = 45 mhz + 14.5 dbv rf input step-up. if frequency = 455 khz; r17 = 2.4 k ? and r18 = 3.3 k ? . rf level = ? 45 dbm; fm modulation = 1 khz with ? 8 khz peak deviation. audio output with de-em phasis filter and c-message weighted filter. test circuit figure 21 . the parameters listed below are tested using automatic test equipment to assure consis tent electrical characteristics. the limits do not represent the ultimate performance limits of the devic e. use of an optimized rf layout will improve many of the listed parameters. symbol parameter conditions min typ max unit mixer/oscillator section (external lo = 220 mv rms value) f i input frequency - 150 - mhz f osc oscillator frequency - 150 - mhz nf noise figure at 45 mhz - 6.8 - db ip3 i input third-order intercept point 50 ? source; f1=45.0mhz;f2=45.06mhz; input rf level = ? 52 dbm - ? 9- db g p(conv) conversion power gain matched 14.5 dbv step-up 11 17 - db 50 ? source - 2.5 - db r i(rf) rf input resistance single-ended input - 8 - k ? c i(rf) rf input capacitance - 3.0 4.0 pf r o(mix) mixer output resistance mixer_out pin 1.25 1.5 - k ? if section g amp(if) if amplifier gain 50 ? source - 44 - db g lim limiter gain 50 ? source - 58 - db p i(if) if input power for ? 3 db input limiting sensitivity; r17=2.4k ? ; r18=3.3k ? ( figure 21 ); test at if_amp_in pin - ? 105 - dbm ? am am rejection 80 % am 1 khz - 40 - db v o(aud) audio output voltage gain of two (2 k ? ac load) 60 120 - mv sinad signal-to-noise-and-distortion ratio if level ? 110 dbm - 17 - db thd total harmonic distortion ? 30 ? 45 - db s/n signal-to-noise ratio no modulation for noise - 62 - db v o(rssi) rssi output voltage rf; r9 = 2 k ? rf level = ? 118 dbm - 0.3 0.8 v rf level = ? 68 dbm 0.7 1.1 2 v rf level = ? 23 dbm 1.0 1.8 2.5 v ? rssi(range) rssi range - 80 - db ?? rssi rssi variation - ? 2- db z i(if) if input impedance if_amp_in pin 1.3 1.5 - k ? z o(if) if output impedance if_amp_out pin - 0.3 - k ? z i(lim) limiter input impedance li miter_in pin 1.3 1.5 - k ? z o(lim) limiter output impedance limiter_out pin - 0.3 - k ? v o(rms) rms output voltage limiter_out pin - 130 - mv
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 8 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 12. performance curves rf/if section (internal lo) v o(aud)rms rms audio output voltage v cc = 3 v; rf level = ? 27 dbm - 120 - mv v o(rssi) rssi output voltage system; v cc =3v; rf level = ? 27 dbm -2.2-v sinad signal-to-noise-and-distortion ratio system; rf level = ? 117 dbm - 12 - db table 6. dynamic characteristics ?continued t amb =25 ? c; v cc = 3 v; unless specified otherwise. rf frequency = 45 mhz + 14.5 dbv rf input step-up. if frequency = 455 khz; r17 = 2.4 k ? and r18 = 3.3 k ? . rf level = ? 45 dbm; fm modulation = 1 khz with ? 8 khz peak deviation. audio output with de-em phasis filter and c-message weighted filter. test circuit figure 21 . the parameters listed below are tested using automatic test equipment to assure consis tent electrical characteristics. the limits do not represent the ultimate performance limits of the devic e. use of an optimized rf layout will improve many of the listed parameters. symbol parameter conditions min typ max unit fig 4. supply current versus ambient temperature fig 5. third order intercept point versus ambient temperature and supply voltage t amb ( c) ? 55 125 5 002aaf410 4 6 i cc (ma) 2 65 105 85 45 25 ? 15 ? 35 v cc = 7.0 v 5.0 v 3.0 v 2.7 v 3 5 t amb ( c) ? 40 90 60 ? 20 002aaf411 ? 11.0 ? 9.0 ? 8.0 ip3 i (dbm) ? 14.0 02040 80 ? 10.0 ? 12.0 ? 13.0 v cc = 2.7 v 3.0 v 7.0 v
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 9 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system fig 6. mixer noise figure versus ambient temperature and supply voltage fig 7. conversion gain versus ambient temperature and supply voltage t amb ( c) ? 40 90 60 ? 20 002aaf412 6.5 7.5 8.0 nf (db) 5.0 02040 80 7.0 6.0 5.5 v cc = 2.7 v 3.0 v 7.0 v t amb ( c) ? 40 90 60 ? 20 002aaf413 17.0 16.5 17.5 18.0 g p(conv) (db) 16.0 02040 80 v cc = 2.7 v 3.0 v 7.0 v
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 10 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system rf = 45 mhz; if = 455 khz. (1) fund product. (2) third order product. (3) 50 ? input. fig 8. mixer third order intercept and compression rf (3) input level (dbm) ? 66 34 14 ? 26 ? 6 ? 46 002aaf414 ? 40 ? 20 ? 60 0 20 if output power (dbm) ? 80 (1) (2)
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 11 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system v cc = 3 v; rf = 45 mhz; deviation = ? 8khz; v o(aud)rms = 104.9 mv. fig 9. relative level of audi o, am rejection, thd+n and noise versus rf level (t amb = ? 40 ? c) v cc = 3 v; rf = 45 mhz; deviation = ? 8khz; v o(aud)rms = 117.6 mv. fig 10. relative level of au dio, am rejection, thd+n and noise versus rf level (t amb =+25 ? c) 002aaf415 ? 55 ? 45 ? 35 ? 25 ? 5 rf level (dbm) ? 125 ? 25 ? 45 ? 85 ? 65 ? 105 audio noise thd+n am rejection ? 15 5 relative level (db) ? 65 002aaf416 ? 15 5 ? 65 ? 55 ? 45 ? 35 ? 25 ? 5 rf level (dbm) ? 125 ? 25 ? 45 ? 85 ? 65 ? 105 audio noise thd+n am rejection relative level (db)
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 12 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system v cc = 3 v; rf = 45 mhz; deviation = ? 8khz; v o(aud)rms = 127 mv. fig 11. relative level of au dio, am rejection, thd+n and noise versus rf level (t amb =+85 ? c) v cc = 3 v; rf = 45 mhz; rf level = ? 45 dbm; deviation = ? 8khz; v o(aud)rms = +117.6 mv. fig 12. relative audi o level, distortion, am re jection and noise versus ambient temperature 002aaf417 ? 15 5 ? 65 ? 55 ? 45 ? 35 ? 25 ? 5 rf level (dbm) ? 125 ? 25 ? 45 ? 85 ? 65 ? 105 audio noise thd+n am rejection relative level (db) t amb ( c) ? 55 125 65 5 ? 35 002aaf418 ? 15 5 ? 65 ? 15 20 45 85 105 ? 55 ? 45 ? 35 ? 25 ? 5 audio noise distortion am rejection relative level (db)
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 13 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 455 khz if at 3 v. fig 13. rssi output voltage versus if level v cc =3v fig 14. rssi output voltage versus rf level if level (dbm) ? 95 5 ? 15 ? 55 ? 35 ? 75 002aaf419 0.8 1.6 2.4 v o(rssi) (v) 0 0.4 1.2 2.0 t amb = +85 c room ? 40 c rf level (dbm) ? 125 ? 25 ? 45 ? 85 ? 65 ? 105 002aaf420 0.9 1.5 2.1 v o(rssi) (v) 0.3 0.6 1.2 1.8 t amb = +85 c +27 c ? 40 c
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 14 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 13. application information fig 15. rms audio output voltage versus ambient temperature t amb ( c) ? 55 125 5 002aaf421 65 105 85 45 25 ? 15 ? 35 v cc = 7.0 v 5.0 v 3.0 v 2.7 v 100 200 300 v o(aud)rms (mv) 0 the layout is very critical in the performanc e of the receiver. we highly recommend our demo board layout. all of the inductors, the quad tank, and their shield must be grounded. a 10 ? f to 15 ? f or higher value tantalum capacitor on the supply line is es sential. a low frequency esr screening test on this capacitor will ensure consistent good sensitivity in production. a 0.1 ? f bypass capacitor on the supply pin, and grounded near the 44.545 mhz oscill ator improves sensitivity by 2 db to 3 db. fig 16. sa616 45 mhz application circuit (sa616dk demo board) 002aaf408 mixer if amp limiter osc rssi quad audio vreg 20 19 18 17 16 15 14 13 12 11 1234567 8910 c23 c21 fl1 c18 c17 fl2 r17 2.4 k r18 3.3 k c26 c15 c9 c10 v cc rssi_out r11 10 k c12 r10 8.2 k audio_out c27 r19 11 k ift1 c19 390 pf c14 c7 l2 x1 c6 c8 c5 l1 c1 c2 45 mhz input
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 15 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system [1] the ceramic filters can be 30 khz sfg455a3s made by murata that have 30 khz if bandwidth (they come in blue), or 16 khz cfu455ds, also made by murata (t hey come in black). all of our specifications and testing are done with the more wide-band filter. [2] r5 can be used to bias the oscillator transist or at a higher current for operation above 45 mhz. recommended value is 22 k ? , but should not be below 10 k ? . table 7. sa616dk demo board component list component description c1 51 pf npo ceramic c2 220 pf npo ceramic c5, c9, c14, c17, c18, c21, c23, c26 100 nf ? 10 % monolithic ceramic c6 30 pf trim cap c7 1 nf ceramic c8, c15 10.0 pf npo ceramic c10 15 ? f tantalum (minimum) c12 2.2 ? f ? 10 % tantalum c19 390 pf ? 10 % monolithic ceramic c27 2.2 ? f tantalum fl1, fl2 [1] ceramic filter murata sfg455a3 or equivalent ift1 330 ? h toko 836an-0129z l1 0.33 ? h toko a638an-0158z l2 1.2 ? h toko fslm2520-1r2k x1 44.545 mhz crystal icm4712701 r5 [2] not used in application board r10 8.2 k ?? 5 % 1/4w carbon composition r11 10 k ?? 5 % 1/4w carbon composition r17 2.4 k ?? 5 % 1/4w carbon composition r18 3.3 k ?? 5 % 1/4w carbon composition r19 11 k ?? 5 % 1/4w carbon composition
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 16 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system fig 17. sa6x6dk/sa58640dk top view with components 001aal912 toko sa6x6dk sa58640dk l1 l2 c6 c10 ft1 c9 c27 c12 4.7 nf rssi vcc audio gnd audio_dc if = 455 khz rf in 45 mhz 820 c1 c2 c21 c23 c7 x1 44.545 mhz c8 c5 r11 c15 c14 c17 c18 r19 r17 fil1 455 khz 455 khz fil2 r18 c26 c19 r10 u1
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 17 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system fig 18. sa6x6dk/sa58640dk botto m view (viewed from top) 001aal892
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 18 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system fig 19. sa616bs top view with components 001aal913 sa6x6bs rf in 45 mhz if = 455 khz rssi x1 c9 c10 c27 r1a c1a ft1 r10 c19 c7 c8 c5 c6 l1 l2 c1 c2 c26 c21 455 khz 455 khz c23 r18 r17 c14 c18 c17 r19 c15 c12 r11 44.545 mhz vcc audio gnd audio_dc
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 19 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system fig 20. sa616bs bottom view (viewed from top) 001aal893
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 20 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 14. test information fig 21. sa616 45 mhz test circuit (relays as shown) 002aaf407 mixer if amp limiter osc rssi quad audio vreg 20 19 18 17 16 15 14 13 12 11 1234 567 8 910 c23 c21 fl1 c18 c17 fl2 r17 2.4 k c26 c15 c9 c10 v cc rssi_out c12 r10 audio_out c27 r19 16 k ift1 c14 c7 l2 x1 c6 c8 l1 c1 c2 45 mhz c16 1.3 k 51.7 ? 36 db, 156 k /50 pad sw5 sw6 c19 32.8 71.5 96.5 ? 10.6 db, 50 /50 pad sw7 r18 3.3 k c20 51.5 ? 29 db, 929 /50 pad sw8 c22 32.6 96.5 ? 10.6 db, 50 /50 pad 71.5 c24 3880 50.5 ? 25 db, 1500 /50 pad 2430 sw9 r13 sw11 r14 r11 sw10 r12 deemphasis filter r9 sw4 r8 39.2 r7 30.5 r6 178 ext. loc osc 44.545 mhz sw3 c5 sw1 r4 c4 51.1 sw2 c3 r2 r1 r3 c-weighted audio measurement circuit mini-circuit zsc2-1b 45.06 mhz
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 21 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system table 8. automatic test circuit component list component description c1 100 pf npo ceramic c2 390 pf npo ceramic c5, c9, c14, c17, c18, c21, c23, c25, c26, c27 100 nf ? 10 % monolithic ceramic c6 22 pf npo ceramic c7 1 nf ceramic c8, c15 10 pf npo ceramic c10 15 ? f tantalum (minimum) c12 2.2 ? f fl1, fl2 ceramic filter, murata sfg455a3 or equivalent ift1 455 khz (ce = 180 pf) toko rmc-2a6597h l1 147 nh to 160 nh coilcraft uni-10/142-04j08s l2 0.8 ? h nominal; toko 292cns-t1038z r9 2 k ?? 1 % 1/4 w metal film r10 8.2 k ?? 1% r11, r14 10 k ?? 1% r12 2 k ?? 1% r13 20 k ?? 1% r17 2.4 k ?? 5 % 1/4 w carbon composition r18 3.3 k ? r19 16 k ? x1 44.545 mhz crystal icm4712701
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 22 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system (1) set rf generator at 45.000 mhz; use a 1 khz modulation frequency and a 6 khz deviation if using 16 khz filters, or 8 khz if using 30 khz filters. (2) the smallest rssi voltage (i.e., when no rf input is present and the input is terminated) is a measure of the quality of the layout and design. if the lowest rssi voltage is 500 mv or higher, it means the receiver is in regenerative mode. in that case, the receiver sensit ivity will be worse than expected. (3) the c-message and de-emphasis filter combinati on has a peak gain of 10 db for accurate measurements. without the gain, the measurement s may be affected by the noise of the scope and hp339 analyzer. the de-emph asis filter has a fixed ? 6 db/octave slope between 300 hz and 3khz. fig 22. sa616 application circuit test setup scope sa616 demoboard (2) rssi audio 002aaf409 rf generator (1) 45 mhz v cc (+3 v) dc voltmeter hp339a distortion analyzer c?message (3) de-emphasis filter
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 23 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 15. package outline fig 23. package outline sot266-1 (ssop20) unit a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v references outline version european projection issue date iec jedec jeita mm 0.15 0 1.4 1.2 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 1 0.2 6.6 6.2 0.65 0.45 0.48 0.18 10 0 o o 0.13 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.20 mm maximum per side are not included. 0.75 0.45 sot266-1 mo-152 99-12-27 03-02-19 w m a a 1 a 2 b p d h e l p q detail x e z e c l v m a x (a ) 3 a y 0.25 110 20 11 pin 1 index 0 2.5 5 mm scale ssop20: plastic shrink small outline package; 20 leads; body width 4.4 mm sot266-1 a max. 1.5
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 24 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system fig 24. package outline sot917-1 (hvqfn20) 0.5 1 a 1 e h b unit y e 0.2 c references outline version european projection issue date iec jedec jeita mm 4.1 3.9 d h 2.45 2.15 y 1 4.1 3.9 2.45 2.15 e 1 2 e 2 2 0.30 0.18 0.05 0.00 0.05 0.1 dimensions (mm are the original dimensions) sot917 -1 mo-220 - - - - - - 0.6 0.4 l 0.1 v 0.05 w 0 2.5 5 mm scale sot917-1 hvqfn20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm a (1) max. 05-10-08 05-10-31 e (1) d (1) note 1. plastic or metal protrusions of 0.075 mm maximum per side are not included. y y 1 c x c d e b a terminal 1 index area e l e h d h e e 1 b 610 20 16 15 11 5 1 e 2 a c c b v m w m terminal 1 index area detail x a a 1 c
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 25 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 16. soldering of smd packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 ?surface mount reflow soldering description? . 16.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electr ical circuits. the soldered joint provides both the mechanical and the electrical connection. th ere is no single sold ering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for fine pitch smds. reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 16.2 wave and reflow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased pr obability of bridging. the reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. leaded packages, packages with solder balls, and leadless packages are all reflow solderable. key characteristics in both wave and reflow soldering are: ? board specifications, in cluding the board finish , solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivit y level of the packages ? package placement ? inspection and repair ? lead-free soldering versus snpb soldering 16.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhe sive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath specifications, including temperature and impurities
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 26 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 16.4 reflow soldering key characteristics in reflow soldering are: ? lead-free versus snpb solderi ng; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see figure 25 ) than a snpb process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? reflow temperature profile; this profile includ es preheat, reflow (in which the board is heated to the peak temperature) and coolin g down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classified in accordance with ta b l e 9 and 10 moisture sensitivity precautions, as indicat ed on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during reflow soldering, see figure 25 . table 9. snpb eutectic process (from j-std-020c) package thickness (mm) package reflow temperature ( ? c) volume (mm 3 ) < 350 ? 350 < 2.5 235 220 ? 2.5 220 220 table 10. lead-free process (from j-std-020c) package thickness (mm) package reflow temperature ( ? c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 27 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system for further information on temperature profiles, refer to application note an10365 ?surface mount reflow soldering description? . 17. abbreviations msl: moisture sensitivity level fig 25. temperature profiles for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature table 11. abbreviations acronym description am amplitude modulation amp active monitor present ask amplitude shift keying esd electrostatic discharge esr equivalent series resistance fm frequency modulation fsk frequency shift keying if intermediate frequency lc inductor/capacitor filter lo local oscillator pcb printed-circuit board rf radio frequency rms root mean squared rssi received signal strength indicator sinad signal-to-noise and distortion ratio tac telenet access controller vhf very high frequency
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 28 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 18. revision history table 12. revision history document id release date data sheet status change notice supersedes sa616 v.3 20100621 product data sheet - sa616_2 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? added hvqfn20 package. ? symbol and parameter definitions are updated to new nxp presentation standards. ? moved z th(j-a) specification from table 3 ? limiting values ? to (new) table 4 ? thermal characteristics ? ? table 7 ? sa616dk demo board component list ? : ? component ift1 changed from ?303ln-1130? to ?836an-01297z? ? component l1 changed from ?scb-1320z? to ?a638an-0158z? ? component l2: appended ?toko fslm2520-1r2k? ? (old) figure 18 replaced with figure 17 ? sa6x6dk/sa58640dk top view with components ? and figure 18 ? sa6x6dk/sa58640dk bottom view (viewed from top) ? . ? added figure 19 ? sa616bs top view with components ? and figure 20 ? sa616bs bottom view (viewed from top) ? . sa616_2 19971107 product specification ecn 853-1676 18665 dated 1997 nov 07 sa616_1 sa616_1 19931215 product specification ecn 853-1676 11649 dated 1993 dec 15 -
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 29 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system 19. legal information 19.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 19.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 19.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
sa616 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 21 june 2010 30 of 31 nxp semiconductors sa616 low-voltage high performance mixer fm if system non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 19.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 20. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors sa616 low-voltage high performance mixer fm if system ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 21 june 2010 document identifier: sa616 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 21. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 functional description . . . . . . . . . . . . . . . . . . . 5 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 thermal characteristics . . . . . . . . . . . . . . . . . . 6 10 static characteristics. . . . . . . . . . . . . . . . . . . . . 6 11 dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 performance curves . . . . . . . . . . . . . . . . . . . . . 8 13 application information. . . . . . . . . . . . . . . . . . 14 14 test information . . . . . . . . . . . . . . . . . . . . . . . . 20 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 23 16 soldering of smd packages . . . . . . . . . . . . . . 25 16.1 introduction to soldering . . . . . . . . . . . . . . . . . 25 16.2 wave and reflow soldering . . . . . . . . . . . . . . . 25 16.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 25 16.4 reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 26 17 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 27 18 revision history . . . . . . . . . . . . . . . . . . . . . . . . 28 19 legal information. . . . . . . . . . . . . . . . . . . . . . . 29 19.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 29 19.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 19.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 19.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 30 20 contact information. . . . . . . . . . . . . . . . . . . . . 30 21 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

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